Can PECVD electric heating coating furnace be used for graphene growth?

PECVD (Plasma Enhanced Chemical Vapor Deposition) technology is a technique that generates glow discharge on the cathode of a process chamber through low-temperature plasma in a low-pressure environment, and then uses this discharge effect (or supplemented with a heating device) to heat the sample to a preset temperature. Subsequently, an appropriate amount of process gas is introduced, and complex chemical and plasma reactions occur under the action of a radio frequency electric field, ultimately depositing a solid thin film on the surface of the sample. Graphene, as a two-dimensional carbon nanomaterial composed of carbon atoms in sp ² hybridized orbitals forming a hexagonal honeycomb lattice, can also be grown by PECVD technology.

The application of PECVD electric heating coating furnace in graphene growth has the following advantages:

Low temperature operation: PECVD technology is usually performed within the range of 300-500 ° C, effectively reducing thermal damage to the sample and suitable for temperature sensitive graphene growth processes.
High speed deposition: PECVD technology can significantly improve the efficiency of thin film deposition, including the growth rate of graphene.
High quality thin film: Graphene thin films grown by PECVD technology have the characteristics of fewer pinholes, less cracking, and excellent physical and chemical properties.
In addition, the PECVD electric heating coating furnace can be customized according to the needs to meet the growth requirements of graphene of different sizes and shapes. Meanwhile, by precisely controlling process parameters such as substrate temperature, gas flow ratio, and RF power, graphene films with specific properties can be prepared.