What are the advantages of PECVD tube furnace compared to CVD tube furnace?

PECVD (plasma enhanced chemical vapor deposition) tube furnace exhibits significant advantages over CVD (chemical vapor deposition) tube furnace in multiple aspects, mainly reflected in technical principles, deposition conditions, deposition rate, film quality, and application fields.
1. Technical principles and sedimentary conditions
PECVD: Using plasma to excite chemical reactions, by adding high-energy electrons, ions, and free radicals, the reaction is carried out at lower temperatures. The presence of plasma increases the reaction rate, thereby reducing the deposition temperature of the material. PECVD typically operates between room temperature and several hundred degrees Celsius.
CVD: Thermochemical reaction carried out under normal pressure or slight vacuum, which decomposes the precursor gas by heating it and deposits it on the substrate surface, usually requiring a high temperature, typically between a few hundred degrees Celsius to several thousand degrees Celsius.
2. Sedimentation rate
PECVD: Due to the action of plasma, although the deposition rate of PECVD is relatively low, usually between a few nanometers to tens of nanometers per minute, this rate is sufficient to meet the needs of many applications and can achieve efficient deposition at lower temperatures.
CVD has a relatively high deposition rate, typically ranging from tens of nanometers to several micrometers per minute, or even higher. However, this high sedimentation rate is often accompanied by higher sedimentation temperatures.
3. Film quality
PECVD: Due to its lower temperature, PECVD reduces the adverse effects of high temperatures on film quality, such as thermal stress and lattice mismatch. In addition, the thin films prepared by PECVD usually have good uniformity, density, and fewer pinholes, which helps to improve the performance and reliability of the devices.
CVD: Although CVD can also produce high-quality films, it may cause some thermal stress or lattice mismatch at high temperatures, which can affect the performance of the films.
4. Energy consumption and cost
PECVD: Due to its operation at lower temperatures, PECVD can save energy and reduce production costs. In addition, PECVD equipment usually has a high degree of automation and flexibility, which can adapt to different process requirements.
CVD typically requires higher temperatures, resulting in higher energy consumption and correspondingly increased production costs.
5. Application Fields
PECVD: Due to its unique advantages, PECVD is widely used in fields such as thin film coatings, surface modification, optical thin films, photovoltaic cells, and flat panel displays. Especially in the fields of microelectronics, optoelectronics, and energy storage, PECVD technology has important application value.
CVD: CVD is used to prepare various material thin films, including metals, semiconductors, nitrides, oxides, etc., and is widely used in semiconductor devices, optical devices, functional coatings, and other fields.
In summary, PECVD tube furnaces have significant advantages over CVD tube furnaces in terms of deposition temperature, deposition rate, film quality, and energy consumption. These advantages have enabled PECVD technology to be widely applied in multiple fields and demonstrate enormous development potential.