What is the difference between PECVD furnace and CVD furnace?

PECVD furnace (plasma enhanced chemical vapor deposition furnace) and CVD furnace (chemical vapor deposition furnace) are two different chemical vapor deposition technology equipment, which have obvious differences in technical principles, working conditions, deposition rates, and application fields. The following is a detailed analysis of the differences between the two:

1. Technical principles
PECVD furnace:
Using plasma to excite chemical reactions, by adding high-energy electrons, ions, and free radicals, the reaction occurs at lower temperatures.
Under low pressure, low-temperature plasma is used to generate glow discharge on the cathode of the process chamber, which heats up the sample and introduces an appropriate amount of process gas. These gases undergo chemical and plasma reactions to form a solid thin film on the surface of the sample.
CVD furnace:
It is a thermochemical reaction carried out under normal pressure or slight vacuum, which decomposes the precursor gas by heating it and deposits it on the substrate surface.
Higher temperatures are required to induce thermochemical reactions, typically between a few hundred to several thousand degrees Celsius.

2. Working conditions
PECVD furnace:
Usually conducted at lower temperatures, typically between room temperature and a few hundred degrees Celsius, as the presence of plasma can increase the reaction rate.
Can achieve high-quality thin film deposition at lower temperatures, saving energy.
CVD furnace:
Higher temperatures are required to ensure the progress of thermochemical reactions, typically between a few hundred to several thousand degrees Celsius.
High energy consumption.

3. Sedimentation rate
PECVD furnace:
The deposition rate is relatively low, usually between a few nanometers to tens of nanometers per minute.
CVD furnace:
The deposition rate is relatively high, usually between tens of nanometers to a few micrometers per minute, or even higher.

4. Application field
PECVD furnace:
Widely used in thin film coatings, surface modification, optical thin films, photovoltaic cells, flat panel displays, and other fields.
In the optoelectronic industry, it is used to prepare key materials such as solar cells and LED chips.
In the semiconductor industry, it is used to manufacture high-precision products such as integrated circuits and microelectronic devices.
CVD furnace:
Used for preparing various material thin films, including metals, semiconductors, nitrides, oxides, etc.
Widely used in semiconductor devices, optical devices, functional coatings, and other fields.
In the manufacturing industry, there are also important applications such as producing transistors, optoelectronic devices, ceramics, etc.

5. Equipment characteristics
PECVD furnace:
The combination of plasma enhanced chemical vapor deposition technology and high-precision automated control system provides efficient and accurate conditions for the preparation of various materials.
Can achieve high-quality thin film deposition at low temperatures, saving energy.
CVD furnace:
The uniform temperature in the reaction area is beneficial for improving the reaction rate and shortening the deposition time.
The tubular furnace has a simple structure, is easy to clean and replace components, and improves the stability and reliability of the equipment.

In summary, there are significant differences between PECVD furnaces and CVD furnaces in terms of technical principles, working conditions, deposition rates, and application areas. When choosing which technology to use, it is necessary to comprehensively consider specific process requirements and material characteristics.